Edward Yi Chang
National Chiao Tung University, Hsin Chu
Prof. Dr. Edward Y. Chang received his B.S. degree from Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan in 1977, and his Ph.D. degree from Materials Science and Engineering, University of Minnesota Minneapolis, MN in 1985. Dr. Chang was with Unisys Corporation GaAs Component Group, Eagan, MN, 1985 to 1988 and Comsat Labs Microelectronic Group from 1988 to 1992. He worked on the GaAs MMIC programs on both groups. He joined National Chiao Tung University (NCTU), Hsinchu, Taiwan, in 1992. In 1994, he helped set up the first GaAs MMIC production line in Taiwan, and become president of Hexawave Inc., Hsinchu, Taiwan, in 1995. He returned to the teaching position at NCTU in 1999. Dr. Chang is currently the Dean of Research and Development and professor of the Department of Materials Science and Engineering and Dept of Elecrical Engineering at NCTU. He is also the director of Diamond Lab and the director of NCTU-TSMC research center. Dr. Chang has received quite a few honors from Taiwan and abroad, including two times Outstanding. Research Award and Distinguished Contribution for Technical Transfer to Industry, both from National Science Council, Taiwan. National Award for Academic Contribution to Industry and Industry and Economy Contribution Award, both from Ministry of Economic Affairs, Taiwan. Distinguished Electrical Engineering Professor Award from Chinese Institute of Electrical Engineering. He is also Distinguished Lecturer of IEEE, Fellow of Taiwanese Materials Society, and Fellow of IEEE.
His research interests include new device and process technologies for Compound Semiconductors for wireless communication and high power electronic applications.. Dr. Chang is a senior member and a DL(Distinguished Lecturer) of the IEEE Electronic Device Society. Currently his research activities include InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications. GaN based materials (MBE, MOCVD) and High frequency&High power electronic (HEMT) applications. III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications. Advanced package (Flip chip) for high frequency and power applications.