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Eui-Hyeok Yang

Eui-Hyeok Yang

Stevens Institute of Technology, USA


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Title: Controlled growth of graphene, carbon nanotubes and transition metal dichalcogenides

Biography

Biography: Eui-Hyeok Yang

Abstract

My groups research is aimed at understanding some of the basic principles of smart microfluidics and 1D/2D material growth, solving problems in the implementation of these materials. I will present two different topics. First topic is our development of the low pressure chemical vapor deposition (LPCVD) growth of 1D and 2D materials. We grow large-grain single crystalline or large-scale polycrystalline monolayers of MoS2, MoSe2, WSe2 and WS2 along with other transition metal dichalcogenides (TMDs). Our unique growth method permits the growth of TMDs on the contacted areas only, enabling the chip-scale fabrication of heterostructures in arbitrary shapes without lithography. We also demonstrate an approach toward controlled CNT growth atop graphene substrates, where the reaction equilibrium between the source hydrocarbon decomposition and carbon saturation into/precipitation from the catalyst nanoparticles shifts toward CNT growth, rather than graphene consumption. Second, we demonstrate a novel in situ control of the droplet pinning on the polymer surface, enabling the control of droplet adhesion from strongly pinned to extremely slippery (and vice versa). The adhesion of organic droplets on the surfaces dramatically switches in situ (i.e., without the removal of liquid droplets), presenting a great potential for in situ manipulation and control of liquid droplets for various applications including lab-on-chip technologies, oil separation, and water treatment.